The FDAF69N25 is a N-CHANNEL MOSFET from Onsemi with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a drain to source breakdown voltage of 250V and a continuous drain current of 34A. The device has a maximum power dissipation of 115W and a drain to source resistance of 41mR. It is available in a through hole package and is RoHS compliant.
MountingThrough Hole
PolarityN-CHANNEL
Power115W
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Technical Specifications
Onsemi FDAF69N25 technical specifications.
General
| Continuous Drain Current (ID) | 34A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 41mR |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 220ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 4.64nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 115W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 115W |
| Rds On Max | 41mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 130ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDAF69N25 Datasheet
Download the complete datasheet for Onsemi FDAF69N25 to view detailed technical specifications.
No datasheet is available for this part.