N-channel enhancement mode power MOSFET, 60V drain-source voltage, 22A continuous drain current. Features low 3.5mΩ drain-source on-resistance at 10V gate-source voltage. Packaged in a D2PAK (TO-263AB) surface-mount plastic package with gull-wing leads. Operates from -55°C to 175°C, with a maximum power dissipation of 310W.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
Onsemi FDB035AN06A0-F085 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-263
Package/Case
D2PAK
Package Description
Double Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
10.67(Max)
Package Width (mm)
9.65(Max)
Package Height (mm)
4.83(Max)
Seated Plane Height (mm)
5.08(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-263AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
TMOS
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
22A
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Resistance
3.5@10VmOhm
Typical Gate Charge @ Vgs
95@10VnC
Typical Gate Charge @ 10V
95nC
Typical Input Capacitance @ Vds
6400@25VpF
Maximum Power Dissipation
310000mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Typical Output Capacitance
1123pF
Compliance
Cage Code
5V1P1
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
PPAP
Yes
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Onsemi FDB035AN06A0-F085 Datasheet
Download the complete datasheet for Onsemi FDB035AN06A0-F085 to view detailed technical specifications.
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