
N-channel Power MOSFET featuring 300V drain-source breakdown voltage and 14A continuous drain current. This UniFET™ device offers a maximum drain-source on-resistance of 290mΩ at a nominal gate-source voltage of 5V. Designed for surface mounting in a D2PAK (TO-263-3) package, it boasts a maximum power dissipation of 140W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a turn-on delay time of 20ns and a fall time of 75ns.
Onsemi FDB14N30TM technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 290mR |
| Drain to Source Voltage (Vdss) | 300V |
| Drain-source On Resistance-Max | 290MR |
| Dual Supply Voltage | 300V |
| Element Configuration | Single |
| Fall Time | 75ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.83mm |
| Input Capacitance | 1.06nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Surface Mount |
| Nominal Vgs | 5V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 140W |
| Rds On Max | 290mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Termination | SMD/SMT |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 20ns |
| Weight | 1.31247g |
| Width | 11.33mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDB14N30TM to view detailed technical specifications.
No datasheet is available for this part.
