
N-Channel PowerTrench® MOSFET, 100V Drain-Source Breakdown Voltage, 57A Continuous Drain Current, and 15mΩ Max Drain-Source On-Resistance. Features a TO-263-3 surface mount package, 110W maximum power dissipation, and operates from -55°C to 175°C. Includes 4.76nF input capacitance and fast switching times with 47ns turn-on delay and 83ns fall time. Lead-free and RoHS compliant.
Onsemi FDB150N10 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 57A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 15mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 15MR |
| Element Configuration | Single |
| Fall Time | 83ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.76nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 15mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 86ns |
| Turn-On Delay Time | 47ns |
| Weight | 1.31247g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDB150N10 to view detailed technical specifications.
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