N-channel power MOSFET featuring 500V drain-source voltage and 20A continuous drain current. This single-element transistor offers a low 260mΩ drain-to-source resistance. Designed for surface mounting in a D2PAK package, it operates within a temperature range of -55°C to 150°C and supports 250W maximum power dissipation. Key switching characteristics include a 45ns turn-on delay and 60ns fall time.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
Power250W
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Technical Specifications
Onsemi FDB20N50F technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Resistance | 260mR |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.83mm |
| Input Capacitance | 3.39nF |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 250W |
| Rds On Max | 260mR |
| RoHS Compliant | Yes |
| Series | FRFET®, UniFET™ |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 45ns |
| Weight | 1.762g |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDB20N50F Datasheet
Download the complete datasheet for Onsemi FDB20N50F to view detailed technical specifications.
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