N-channel Power MOSFET with 150V drain-source breakdown voltage and 79A continuous drain current. Features low 16mΩ drain-source on-resistance at a nominal 4V gate-source voltage. Surface mount D2PAK package with 310W maximum power dissipation and 175°C maximum operating temperature. Includes fast switching characteristics with 16ns turn-on delay and 17ns fall time.
Onsemi FDB2532 technical specifications.
| Package/Case | TO-263AB |
| Continuous Drain Current (ID) | 79A |
| Current | 79A |
| Current Rating | 79A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 14mR |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 16MR |
| Dual Supply Voltage | 150V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 5.87nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 310W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 310W |
| Rds On Max | 16mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 39ns |
| Turn-On Delay Time | 16ns |
| Voltage | 150V |
| DC Rated Voltage | 150V |
| Width | 11.33mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDB2532 to view detailed technical specifications.
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