
N-Channel Power MOSFET, UniFET™ series, featuring a 300V drain-source breakdown voltage and a continuous drain current of 28A. This surface-mount component offers a maximum drain-source on-resistance of 129mΩ. Designed for high-efficiency power switching, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 250W. The D2PAK package is supplied on an 800-piece tape and reel.
Onsemi FDB28N30TM technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 28A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 108mR |
| Drain to Source Voltage (Vdss) | 300V |
| Drain-source On Resistance-Max | 129mR |
| Element Configuration | Single |
| Fall Time | 69ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.83mm |
| Input Capacitance | 2.25nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 250W |
| Rds On Max | 129mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 79ns |
| Turn-On Delay Time | 35ns |
| Weight | 1.31247g |
| Width | 11.33mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDB28N30TM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
