
N-Channel Power Trench MOSFET featuring 75V drain-source breakdown voltage and 6A continuous drain current. Offers a low 47mΩ drain-source on-resistance. Designed for surface mount applications with a TO-263AB package, operating from -55°C to 150°C. Includes fast switching characteristics with a 9ns turn-on delay and 3ns fall time. This RoHS compliant component supports up to 3.1W power dissipation.
Onsemi FDB3502 technical specifications.
| Package/Case | TO-263AB |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 47mR |
| Drain to Source Voltage (Vdss) | 75V |
| Drain-source On Resistance-Max | 47MR |
| Element Configuration | Single |
| Fall Time | 3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 815pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.1W |
| Radiation Hardening | No |
| Rds On Max | 47mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 9ns |
| Weight | 1.31247g |
| Width | 11.33mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDB3502 to view detailed technical specifications.
No datasheet is available for this part.
