N-Channel Power Trench® MOSFET, 100V Vds, 32A ID, 36mΩ Rds On Max. This single-element MOSFET features a TO-263 surface mount package, 95W power dissipation, and operates from -55°C to 175°C. Key electrical characteristics include a 4V threshold voltage, 1.25nF input capacitance, and fast switching times with 9ns turn-on and 26ns turn-off delays. It is RoHS compliant and lead-free.
PackageTO-263
Current Rating32A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDB3682 technical specifications.
General
Package/Case
TO-263
Continuous Drain Current (ID)
32A
Current Rating
32A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
32mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
36MR
Element Configuration
Single
Fall Time
32ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
1.25nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
95W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
95W
Rds On Max
36mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
4V
Turn-Off Delay Time
26ns
Turn-On Delay Time
9ns
DC Rated Voltage
100V
Weight
1.31247g
Width
11.33mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDB3682 Datasheet
Download the complete datasheet for Onsemi FDB3682 to view detailed technical specifications.
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