N-CHANNEL Power Field-Effect Transistor in TO-263AB package. Features 100V Drain to Source Breakdown Voltage (Vdss) and 6.4A Continuous Drain Current (ID). Offers low 37mR Drain to Source Resistance (Rds On Max) and 71W Max Power Dissipation. Designed for surface mount applications with a 1.74nF input capacitance and fast switching times including 3ns fall time. Operates across a wide temperature range from -55°C to 150°C.
PackageTO-263AB
MountingSurface Mount
PolarityN-CHANNEL
Power3.1W
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Technical Specifications
Onsemi FDB3860 technical specifications.
General
| Package/Case | TO-263AB |
| Continuous Drain Current (ID) | 6.4A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 37mR |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Single |
| Fall Time | 3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.74nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 71W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.1W |
| Radiation Hardening | No |
| Rds On Max | 37mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 12ns |
| Weight | 1.31247g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDB3860 Datasheet
Download the complete datasheet for Onsemi FDB3860 to view detailed technical specifications.
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