
N-Channel PowerTrench® MOSFET, 100V Drain to Source Breakdown Voltage, 30A Continuous Drain Current, 24mΩ Drain to Source Resistance. Features a TO-263AB surface mount package, 1.5V nominal Gate to Source Voltage, and 1.275nF input capacitance. Operates from -55°C to 150°C with a maximum power dissipation of 3.1W. RoHS compliant and supplied in 800-piece tape and reel packaging.
Onsemi FDB86102LZ technical specifications.
| Package/Case | TO-263AB |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Single |
| Fall Time | 2.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.275nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Nominal Vgs | 1.5V |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.1W |
| Radiation Hardening | No |
| Rds On Max | 24mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 18.2ns |
| Turn-On Delay Time | 6.6ns |
| Weight | 1.31247g |
| Width | 11.33mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDB86102LZ to view detailed technical specifications.
No datasheet is available for this part.
