N-Channel Logic Level MOSFET, 30V Vdss, 80A continuous drain current, and 2.6mΩ low Rds(on). This single-element transistor features a TO-263AB surface mount package, 254W max power dissipation, and operates from -55°C to 175°C. Ideal for power switching applications, it offers fast switching speeds with turn-on delay of 14ns and fall time of 49ns. Packaged on an 800-piece tape and reel, this RoHS compliant component is designed for high efficiency.
PackageTO-263AB
MountingSurface Mount
PolarityN-CHANNEL
Power254W
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Technical Specifications
Onsemi FDB8860 technical specifications.
General
Package/Case
TO-263AB
Continuous Drain Current (ID)
80A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
1.9mR
Drain to Source Voltage (Vdss)
30V
Element Configuration
Single
Fall Time
49ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
12.585nF
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
254W
Mount
Surface Mount
Number of Elements
1
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
254W
Radiation Hardening
No
Rds On Max
2.3mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
1.7V
Turn-Off Delay Time
79ns
Turn-On Delay Time
14ns
Weight
1.31247g
Width
11.33mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDB8860 Datasheet
Download the complete datasheet for Onsemi FDB8860 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.