ONSEMI

FDB8874

Datasheet

N-CH MOSFET 30V 121A 4.7mR TO-263 Surface Mount

Onsemi

FDB8874

Name: FDB8874 Onsemi
Brand: Onsemi
SKU: FDB8874

N-CH MOSFET 30V 121A 4.7mR TO-263 Surface Mount

N-channel MOSFET for surface mount applications, featuring a 30V drain-to-source breakdown voltage and a continuous drain current rating of 121A. This component offers a low Rds(on) of 4.7mR, a maximum power dissipation of 110W, and operates within a temperature range of -55°C to 175°C. Key switching characteristics include a fall time of 34ns and a turn-off delay time of 45ns, with an input capacitance of 3.13nF. Designed with a TO-263 package, it is RoHS compliant and lead-free.

PackageTO-263

Current Rating121A

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Onsemi FDB8874 technical specifications.

General

Package/Case	TO-263
Continuous Drain Current (ID)	121A
Current Rating	121A
Drain to Source Breakdown Voltage	30V
Drain to Source Resistance	4.7mR
Drain to Source Voltage (Vdss)	30V
Fall Time	34ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	3.13nF
Lead Free	Lead Free
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	110W
Mount	Surface Mount
Package Quantity	800
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	110W
Rds On Max	4.7mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	PowerTrench®
Threshold Voltage	2.5V
Turn-Off Delay Time	45ns
DC Rated Voltage	30V