N/P-Channel MOSFET, 20V Drain to Source Breakdown Voltage, 5.9A Continuous Drain Current. Features 27mR Rds On Max, 1.6W Power Dissipation, and 12V Gate to Source Voltage. Surface mount device with 8ns Fall Time and 26ns Turn-Off Delay Time. Operates from -55°C to 150°C, RoHS compliant.
Current Rating5.9A
MountingSurface Mount
PolarityP-CHANNEL
Power1.6W
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Technical Specifications
Onsemi FDC6020C technical specifications.
General
| Continuous Drain Current (ID) | 5.9A |
| Current Rating | 5.9A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 55mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 8ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 677pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.6W |
| Rds On Max | 27mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 26ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDC6020C Datasheet
Download the complete datasheet for Onsemi FDC6020C to view detailed technical specifications.
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