
P-Channel MOSFET, 2.5V Specified, featuring a -20V Drain to Source Breakdown Voltage and a continuous drain current of 5.5A. This surface mount device offers a low Drain-source On Resistance of 35mR at a Gate to Source Voltage of -900mV. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.6W. The component is supplied in a SOT-23-6 package, with 3000 units per tape and reel.
Onsemi FDC602P technical specifications.
| Package/Case | SOT-23-6 |
| Continuous Drain Current (ID) | 5.5A |
| Current | 55A |
| Current Rating | -5.5A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 35MR |
| Dual Supply Voltage | -20V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1mm |
| Input Capacitance | 1.456nF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Nominal Vgs | -900mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.6W |
| Radiation Hardening | No |
| Rds On Max | 35mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Threshold Voltage | -900mV |
| Turn-Off Delay Time | 57ns |
| Turn-On Delay Time | 15ns |
| Voltage | 20V |
| DC Rated Voltage | -20V |
| Width | 1.7mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDC602P to view detailed technical specifications.
No datasheet is available for this part.
