Dual P-Channel JFET transistor for digital applications. Features a -25V drain-source breakdown voltage and a continuous drain current of 120mA. Offers a low on-resistance of 10.6 Ohms and operates within a -55°C to 150°C temperature range. Packaged in SOT-23-6 for surface mounting, with a 3000-unit tape and reel configuration. RoHS compliant and lead-free.
PackageSOT-23-6
Current Rating-120mA
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDC6302P technical specifications.
General
Package/Case
SOT-23-6
Continuous Drain Current (ID)
120mA
Current Rating
-120mA
Drain to Source Breakdown Voltage
-25V
Drain to Source Resistance
10.6R
Drain to Source Voltage (Vdss)
25V
Dual Supply Voltage
-25V
Element Configuration
Dual
Fall Time
8ns
Gate to Source Voltage (Vgs)
8V
Height
1.12mm
Input Capacitance
11pF
Lead Free
Lead Free
Length
3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
900mW
Mount
Surface Mount
Nominal Vgs
-1V
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
900mW
Rds On Max
10R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Threshold Voltage
-1V
Turn-Off Delay Time
9ns
Turn-On Delay Time
5ns
DC Rated Voltage
-25V
Weight
0.036g
Width
1.68mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDC6302P Datasheet
Download the complete datasheet for Onsemi FDC6302P to view detailed technical specifications.
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