
Dual P-Channel JFET transistor for digital applications. Features a -25V drain-source breakdown voltage and a continuous drain current of 120mA. Offers a low on-resistance of 10.6 Ohms and operates within a -55°C to 150°C temperature range. Packaged in SOT-23-6 for surface mounting, with a 3000-unit tape and reel configuration. RoHS compliant and lead-free.
Onsemi FDC6302P technical specifications.
| Package/Case | SOT-23-6 |
| Continuous Drain Current (ID) | 120mA |
| Current Rating | -120mA |
| Drain to Source Breakdown Voltage | -25V |
| Drain to Source Resistance | 10.6R |
| Drain to Source Voltage (Vdss) | 25V |
| Dual Supply Voltage | -25V |
| Element Configuration | Dual |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.12mm |
| Input Capacitance | 11pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Nominal Vgs | -1V |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 900mW |
| Rds On Max | 10R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 9ns |
| Turn-On Delay Time | 5ns |
| DC Rated Voltage | -25V |
| Weight | 0.036g |
| Width | 1.68mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDC6302P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.