FDC6312P

Dual P-Channel MOSFET, 1.8V specified, featuring a -20V Drain to Source Breakdown Voltage and a continuous drain current of 2.3A. This surface mount component offers a low Drain-source On Resistance of 115mR at a nominal Vgs of -900mV. With a maximum power dissipation of 960mW and operating temperatures from -55°C to 150°C, it is ideal for demanding applications. The SOT-23-6 package contains two elements, configured as dual P-channel, with fast switching times including an 8ns turn-on delay and 13ns fall time. Packaged on a 3000-reel tape and reel, this RoHS compliant component is designed for efficient power management.