Dual N & P Channel Digital FET, 25V, 3000/REEL. Features 25V Drain to Source Breakdown Voltage, 4Ω Drain-source On Resistance-Max, and 120mA Continuous Drain Current. Operates with a Gate to Source Voltage of 8V and offers a 6ns Fall Time. Packaged in SOT-23-6 for surface mount applications, this RoHS compliant component has a max power dissipation of 900mW.
PackageSOT-23-6
Current Rating220mA
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDC6320C technical specifications.
General
| Package/Case | SOT-23-6 |
| Continuous Drain Current (ID) | 120mA |
| Current Rating | 220mA |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 10.6R |
| Drain to Source Voltage (Vdss) | 25V |
| Drain-source On Resistance-Max | 4R |
| Dual Supply Voltage | 25V |
| Fall Time | 6ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 9.5pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Surface Mount |
| Nominal Vgs | 850mV |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 900mW |
| Radiation Hardening | No |
| Rds On Max | 4R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | 850mV |
| Turn-Off Delay Time | 7.4ns |
| Weight | 0.036g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDC6320C Datasheet
Download the complete datasheet for Onsemi FDC6320C to view detailed technical specifications.
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