P-Channel MOSFET, SOT-23-6 package, featuring -20V Drain-Source Breakdown Voltage and 4.5A Continuous Drain Current. Offers a maximum On-Resistance of 43mΩ at 2.5V specified gate-source voltage. Designed for surface mounting with a 1.6W maximum power dissipation and operating temperature range of -55°C to 150°C. Includes fast switching characteristics with a 6ns turn-on delay and 20ns fall time.
PackageSOT-23-6
Current Rating-4.5A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDC638APZ technical specifications.
General
Package/Case
SOT-23-6
Continuous Drain Current (ID)
4.5A
Current Rating
-4.5A
Drain to Source Breakdown Voltage
-20V
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
43MR
Dual Supply Voltage
-20V
Element Configuration
Single
Fall Time
20ns
Gate to Source Voltage (Vgs)
12V
Height
1mm
Input Capacitance
1nF
Lead Free
Lead Free
Length
3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.6W
Rds On Max
43mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Termination
SMD/SMT
Threshold Voltage
-800mV
Turn-Off Delay Time
48ns
Turn-On Delay Time
6ns
DC Rated Voltage
-12V
Weight
0.036g
Width
1.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDC638APZ Datasheet
Download the complete datasheet for Onsemi FDC638APZ to view detailed technical specifications.
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