P-Channel PowerTrench® MOSFET, SOT-23-6 package, offering -20V drain-source breakdown voltage and 4.5A continuous drain current. Features 48mΩ maximum drain-source on-resistance at a nominal Vgs of -800mV. Operates with a gate-to-source voltage up to 8V, exhibiting a 9ns turn-on delay and 33ns turn-off delay. This surface-mount component has a maximum power dissipation of 1.6W and a maximum operating temperature of 150°C.
PackageSOT-23-6
MountingSurface Mount
PolarityP-CHANNEL
Power1.6W
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Technical Specifications
Onsemi FDC638P technical specifications.
General
Package/Case
SOT-23-6
Continuous Drain Current (ID)
4.5A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
48mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
48MR
Dual Supply Voltage
-20V
Element Configuration
Single
Fall Time
9ns
Gate to Source Voltage (Vgs)
8V
Height
1mm
Input Capacitance
1.16nF
Lead Free
Lead Free
Length
3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Nominal Vgs
-800mV
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.6W
Rds On Max
48mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
-800mV
Turn-Off Delay Time
33ns
Turn-On Delay Time
9ns
DC Rated Voltage
-20V
Weight
0.036g
Width
1.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDC638P Datasheet
Download the complete datasheet for Onsemi FDC638P to view detailed technical specifications.
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