
P-Channel MOSFET, 2.5V specified, featuring a continuous drain current of 4.5A and a drain-to-source breakdown voltage of -20V. This surface-mount component offers a low drain-source on-resistance of 53mΩ at a nominal Vgs of -1V. With a maximum power dissipation of 1.6W and an operating temperature range of -55°C to 150°C, it is housed in a SOT-23-6 package. The MOSFET exhibits a turn-on delay time of 12ns and a fall time of 13ns.
Onsemi FDC640P technical specifications.
| Package/Case | SOT-23-6 |
| Continuous Drain Current (ID) | 4.5A |
| Current Rating | -4.5A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 53mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 53mR |
| Element Configuration | Single |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1mm |
| Input Capacitance | 890pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Nominal Vgs | -1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.6W |
| Radiation Hardening | No |
| Rds On Max | 53mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | -20V |
| Weight | 0.036g |
| Width | 1.7mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDC640P to view detailed technical specifications.
No datasheet is available for this part.
