Dual N and P-Channel MOSFETs designed for efficient power switching. Featuring a 20V Drain to Source Breakdown Voltage and a maximum continuous drain current of 2.2A. Surface mountable in a SOT-23-6 package, these devices offer a low Drain-source On Resistance of 70mR. Operating across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 960mW. RoHS compliant and supplied in a 3000-piece tape and reel.
PackageSOT-23-6
Current Rating3A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDC6420C technical specifications.
General
Package/Case
SOT-23-6
Continuous Drain Current (ID)
2.2A
Current Rating
3A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
70mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
70MR
Dual Supply Voltage
20V
Fall Time
12ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
12V
Input Capacitance
324pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
700mW
Mount
Surface Mount
Nominal Vgs
900mV
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
960mW
Radiation Hardening
No
Rds On Max
70mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Termination
SMD/SMT
Threshold Voltage
900mV
Turn-Off Delay Time
10ns
Weight
0.036g
Compliance
RoHS
Compliant
Datasheet
Onsemi FDC6420C Datasheet
Download the complete datasheet for Onsemi FDC6420C to view detailed technical specifications.
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