
Dual N and P-Channel MOSFETs designed for efficient power switching. Featuring a 20V Drain to Source Breakdown Voltage and a maximum continuous drain current of 2.2A. Surface mountable in a SOT-23-6 package, these devices offer a low Drain-source On Resistance of 70mR. Operating across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 960mW. RoHS compliant and supplied in a 3000-piece tape and reel.
Onsemi FDC6420C technical specifications.
| Package/Case | SOT-23-6 |
| Continuous Drain Current (ID) | 2.2A |
| Current Rating | 3A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 70MR |
| Dual Supply Voltage | 20V |
| Fall Time | 12ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 324pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Surface Mount |
| Nominal Vgs | 900mV |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 960mW |
| Radiation Hardening | No |
| Rds On Max | 70mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Threshold Voltage | 900mV |
| Turn-Off Delay Time | 10ns |
| Weight | 0.036g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDC6420C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
