
N-Channel Enhancement Mode Field Effect Transistor, SOT-23-6 package, offering 30V Drain to Source Breakdown Voltage and 5A Continuous Drain Current. Features a low 35mΩ Drain-source On Resistance and 1.6W Max Power Dissipation. Operates across a wide temperature range from -55°C to 150°C. This surface mount device boasts fast switching speeds with a 7.5ns Turn-On Delay Time and 12ns Fall Time.
Onsemi FDC653N technical specifications.
| Package/Case | SOT-23-6 |
| Continuous Drain Current (ID) | 5A |
| Current Rating | 5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 35MR |
| Dual Supply Voltage | 30V |
| Element Configuration | Single |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 350pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Nominal Vgs | 1.7V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.6W |
| Rds On Max | 35mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | 1.7V |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 7.5ns |
| DC Rated Voltage | 30V |
| Weight | 0.03g |
| Width | 1.7mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDC653N to view detailed technical specifications.
No datasheet is available for this part.
