Single P-channel logic level MOSFET, -30V drain-source breakdown voltage, 4A continuous drain current, and 50mΩ maximum drain-source on-resistance. Features a 1.6W maximum power dissipation and a low threshold voltage of -1.8V. This surface-mount device, packaged in SOT-23-6, offers fast switching with turn-on delay time of 7ns and fall time of 12ns. RoHS compliant and designed for efficient power management applications.
PackageSOT-23-6
MountingSurface Mount
PolarityP-CHANNEL
Power1.6W
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Technical Specifications
Onsemi FDC658AP technical specifications.
General
Package/Case
SOT-23-6
Continuous Drain Current (ID)
4A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
44mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
50MR
Dual Supply Voltage
-30V
Element Configuration
Single
Fall Time
12ns
Gate to Source Voltage (Vgs)
25V
Height
1mm
Input Capacitance
470pF
Lead Free
Lead Free
Length
3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Nominal Vgs
-1.8V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.6W
Radiation Hardening
No
Rds On Max
50mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Termination
SMD/SMT
Threshold Voltage
-1.8V
Turn-Off Delay Time
16ns
Turn-On Delay Time
7ns
Weight
0.036g
Width
1.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDC658AP Datasheet
Download the complete datasheet for Onsemi FDC658AP to view detailed technical specifications.
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