
Single P-channel logic level MOSFET, -30V drain-source breakdown voltage, 4A continuous drain current, and 50mΩ maximum drain-source on-resistance. Features a 1.6W maximum power dissipation and a low threshold voltage of -1.8V. This surface-mount device, packaged in SOT-23-6, offers fast switching with turn-on delay time of 7ns and fall time of 12ns. RoHS compliant and designed for efficient power management applications.
Onsemi FDC658AP technical specifications.
| Package/Case | SOT-23-6 |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 44mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 50MR |
| Dual Supply Voltage | -30V |
| Element Configuration | Single |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 1mm |
| Input Capacitance | 470pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Nominal Vgs | -1.8V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.6W |
| Radiation Hardening | No |
| Rds On Max | 50mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Threshold Voltage | -1.8V |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 7ns |
| Weight | 0.036g |
| Width | 1.7mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDC658AP to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
