
Single P-Channel Logic Level MOSFET, designed for efficient power switching. Features a -30V drain-source breakdown voltage and a continuous drain current of 4A. Offers a low 50mΩ drain-source on-resistance, ensuring minimal power loss. Operates with a gate-source voltage up to 20V and boasts fast switching times with a 12ns turn-on delay. Packaged in a compact SOT-23-6 surface-mount case, this RoHS compliant component is ideal for demanding applications.
Onsemi FDC658P technical specifications.
| Package/Case | SOT-23-6 |
| Continuous Drain Current (ID) | 4A |
| Current Rating | -4A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 50mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 50mR |
| Element Configuration | Single |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 750pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.6W |
| Radiation Hardening | No |
| Rds On Max | 50mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | -1.7V |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | -30V |
| Weight | 0.036g |
| Width | 1.7mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDC658P to view detailed technical specifications.
No datasheet is available for this part.
