N-Channel JFET, Logic Level, Surface Mount, SOT-23-6 package. Features 30V Drain to Source Breakdown Voltage, 6.1A Continuous Drain Current, and 27mΩ Drain-Source On Resistance. Operates with a nominal Gate to Source Voltage of 2V and a maximum of 20V. Offers a maximum power dissipation of 1.6W and a maximum operating temperature of 150°C. RoHS compliant and lead-free.
PackageSOT-23-6
MountingSurface Mount
PolarityN-CHANNEL
Power1.6W
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Technical Specifications
Onsemi FDC855N technical specifications.
General
| Package/Case | SOT-23-6 |
| Continuous Drain Current (ID) | 6.1A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 27mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 27MR |
| Element Configuration | Single |
| Fall Time | 2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 655pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.6W |
| Radiation Hardening | No |
| Rds On Max | 27mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 6ns |
| Weight | 0.036g |
| Width | 1.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDC855N Datasheet
Download the complete datasheet for Onsemi FDC855N to view detailed technical specifications.
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