ONSEMI

FDC8884

Datasheet

Onsemi

FDC8884

Name: FDC8884 Onsemi
Brand: Onsemi
SKU: FDC8884

N-Ch MOSFET, 30V, 6.5A, 23mR, SOT-6, SM

N-Channel Power Trench® MOSFET, 30V Drain to Source Breakdown Voltage, 6.5A Continuous Drain Current, and 23mΩ Drain to Source Resistance. This single element transistor features a SOT-6 surface mount package with dimensions of 3mm length, 1.7mm width, and 1mm height. It operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 800mW. The device offers fast switching characteristics with a 5ns turn-on delay and 1ns fall time, and is supplied on a 3000-piece tape and reel.

PackageSOT-6

MountingSurface Mount

PolarityN-CHANNEL

Power800mW

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Technical Specifications

Onsemi FDC8884 technical specifications.

General

Package/Case	SOT-6
Continuous Drain Current (ID)	6.5A
Drain to Source Breakdown Voltage	30V
Drain to Source Resistance	23mR
Drain to Source Voltage (Vdss)	30V
Element Configuration	Single
Fall Time	1ns
Gate to Source Voltage (Vgs)	20V
Height	1mm
Input Capacitance	465pF
Lead Free	Lead Free
Length	3mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	800mW
Mount	Surface Mount
Package Quantity	3000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	800mW
Radiation Hardening	No
Rds On Max	23mR
RoHS Compliant	Yes
Series	PowerTrench®
Turn-Off Delay Time	11ns
Turn-On Delay Time	5ns
Weight	0.036g
Width	1.7mm