The FDD10AN06A0Q is a TO-252AA packaged N-CHANNEL MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 50A and a drain to source breakdown voltage of 60V. The device also features a drain to source resistance of 9.4 milliohms and a power dissipation of 135W. The FDD10AN06A0Q is suitable for high-power applications and is available in tape and reel packaging.
PackageTO-252AA
Resistance15R
PolarityN-CHANNEL
Power135W
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Technical Specifications
Onsemi FDD10AN06A0Q technical specifications.
General
| Package/Case | TO-252AA |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 9.4mR |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 135W |
| Resistance | 15R |
| Turn-Off Delay Time | 32ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDD10AN06A0Q Datasheet
Download the complete datasheet for Onsemi FDD10AN06A0Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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