ONSEMI

FDD10N20LZTM

Datasheet

N-Channel Power MOSFET, 200V, 7.6A, 360mΩ, DPAK, Logic Level

Onsemi

FDD10N20LZTM

Name: FDD10N20LZTM Onsemi
Brand: Onsemi
SKU: FDD10N20LZTM

N-Channel Power MOSFET, 200V, 7.6A, 360mΩ, DPAK, Logic Level

N-Channel Power MOSFET, Logic Level, UniFET™ series, featuring 200V drain-source breakdown voltage and 7.6A continuous drain current. This surface-mount device in a DPAK package offers a low 360mΩ Rds On, with fast switching speeds including 10ns turn-on delay and 25ns fall time. Maximum power dissipation is 83W, operating across a temperature range of -55°C to 150°C.

PackageDPAK

MountingSurface Mount

PolarityN-CHANNEL

Power56W

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Technical Specifications

Onsemi FDD10N20LZTM technical specifications.

General

Package/Case	DPAK
Continuous Drain Current (ID)	7.6A
Drain to Source Breakdown Voltage	200V
Drain to Source Resistance	300mR
Drain to Source Voltage (Vdss)	200V
Element Configuration	Single
Fall Time	25ns
Gate to Source Voltage (Vgs)	20V
Height	2.39mm
Input Capacitance	585pF
Length	6.73mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	83W
Mount	Surface Mount
Package Quantity	2500
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	56W
Radiation Hardening	No
Rds On Max	360mR
RoHS Compliant	Yes
Series	UniFET™
Turn-Off Delay Time	55ns
Turn-On Delay Time	10ns
Weight	0.26037g
Width	6.22mm