N-Channel PowerTrench® MOSFET with integrated diode, designed for efficient power switching. Features a 100V drain-source voltage and 6.8A continuous drain current. Offers a low 160mΩ drain-to-source resistance. Packaged in a DPAK surface-mount case, supplied on a 2500-piece tape and reel. Operates across a wide temperature range from -55°C to 150°C.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Onsemi FDD1600N10ALZD technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 6.8A |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Single |
| Fall Time | 2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 225pF |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 14.9W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 160mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 7ns |
| Weight | 0.26037g |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDD1600N10ALZD Datasheet
Download the complete datasheet for Onsemi FDD1600N10ALZD to view detailed technical specifications.
No datasheet is available for this part.