N-Channel Power MOSFET, UniFET™ series, designed for logic-level gate drive. Features 200V drain-source breakdown voltage and 16A continuous drain current. Offers a maximum drain-source on-resistance of 125mΩ. Packaged in a DPAK surface-mount package, with dimensions of 6.73mm length, 6.22mm width, and 2.39mm height. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 89W. Supplied on a 2500-piece tape and reel.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power89W
Quick Jump:
Technical Specifications
Onsemi FDD18N20LZ technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
16A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
125mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
125MR
Element Configuration
Single
Fall Time
50ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
1.575nF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
89W
Mount
Surface Mount
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
89W
Radiation Hardening
No
Rds On Max
125mR
RoHS Compliant
Yes
Series
UniFET™
Turn-Off Delay Time
135ns
Turn-On Delay Time
15ns
Weight
0.26037g
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDD18N20LZ Datasheet
Download the complete datasheet for Onsemi FDD18N20LZ to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
