Dual N-Channel and P-Channel MOSFET, 80V Drain to Source Breakdown Voltage, 2.8A Continuous Drain Current. Features 80mR Drain-Source On Resistance-Max, 1.3W Max Power Dissipation, and 150°C Max Operating Temperature. Surface mount TO-252-5 package, 2500 units per tape and reel. RoHS compliant and lead-free.
PackageTO-252-5
MountingSurface Mount
PolarityN-CHANNEL
Power3.1W
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Technical Specifications
Onsemi FDD3510H technical specifications.
General
| Package/Case | TO-252-5 |
| Continuous Drain Current (ID) | 2.8A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 80V |
| Drain-source On Resistance-Max | 80MR |
| Fall Time | 5ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 800pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.1W |
| Radiation Hardening | No |
| Rds On Max | 80mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 25ns |
| Weight | 0.26037g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDD3510H Datasheet
Download the complete datasheet for Onsemi FDD3510H to view detailed technical specifications.
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