N-Channel Power MOSFET, UniFET™ series, featuring a 400V drain-source breakdown voltage and a continuous drain current of 2A. This single-element transistor offers a maximum drain-source on-resistance of 3.4Ω and a power dissipation of 30W. Packaged in a DPAK surface-mount case, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 25ns fall time, 10ns turn-on delay, and 10ns turn-off delay.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power30W
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Technical Specifications
Onsemi FDD3N40TM technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 2.8R |
| Drain to Source Voltage (Vdss) | 400V |
| Drain-source On Resistance-Max | 3.4R |
| Element Configuration | Single |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.39mm |
| Input Capacitance | 225pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| Rds On Max | 3.4R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Termination | SMD/SMT |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.26037g |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDD3N40TM Datasheet
Download the complete datasheet for Onsemi FDD3N40TM to view detailed technical specifications.
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