P-Channel MOSFET featuring a -40V drain-source breakdown voltage and a maximum continuous drain current of 8.4A. Offers a low 27mΩ drain-source on-resistance at a nominal Vgs of -1.6V. Designed for surface mounting in a TO-252 package, this single-element transistor boasts a maximum power dissipation of 69W and operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with an 8ns turn-on delay and 14ns fall time.
PackageTO-252
Current Rating-8.4A
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Onsemi FDD4685 technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 8.4A |
| Current Rating | -8.4A |
| Drain to Source Breakdown Voltage | -40V |
| Drain to Source Resistance | 27mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 27MR |
| Dual Supply Voltage | -40V |
| Element Configuration | Single |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 2.38nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 69W |
| Mount | Surface Mount |
| Nominal Vgs | -1.6V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 69W |
| Radiation Hardening | No |
| Rds On Max | 27mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Threshold Voltage | -1.6V |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | -40V |
| Weight | 0.26037g |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDD4685 Datasheet
Download the complete datasheet for Onsemi FDD4685 to view detailed technical specifications.
No datasheet is available for this part.
Product Images
