N-Channel Power MOSFET, UniFET-II™ series, featuring 600V drain-to-source breakdown voltage and 3.4A continuous drain current. Surface mountable in a TO-252-3 (DPAK) package, this component offers a maximum on-resistance of 2.5Ω and a power dissipation of 114W. Designed for efficient switching, it exhibits turn-on delay time of 12.7ns and fall time of 12.8ns. Operating across a wide temperature range from -55°C to 150°C, it is RoHS compliant and lead-free.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power114W
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Technical Specifications
Onsemi FDD4N60NZ technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 3.4A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 1.9R |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 12.8ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 2.39mm |
| Input Capacitance | 510pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 114W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 114W |
| Rds On Max | 2.5R |
| RoHS Compliant | Yes |
| Series | UniFET-II™ |
| Turn-Off Delay Time | 30.2ns |
| Turn-On Delay Time | 12.7ns |
| Weight | 0.26037g |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDD4N60NZ Datasheet
Download the complete datasheet for Onsemi FDD4N60NZ to view detailed technical specifications.
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