N-Channel PowerTrench® MOSFET, surface mount, TO-252AA package. Features 60V drain-source breakdown voltage and 18A continuous drain current. Offers low 55mΩ drain-source on-resistance at a nominal 2.4V gate-source voltage. Operates from -55°C to 175°C with a maximum power dissipation of 42W. RoHS compliant and lead-free.
PackageTO-252AA
Current Rating18A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDD5612 technical specifications.
General
Package/Case
TO-252AA
Continuous Drain Current (ID)
18A
Current Rating
18A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
36mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
64MR
Dual Supply Voltage
60V
Element Configuration
Single
Fall Time
4ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
660pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Nominal Vgs
2.4V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
42W
Radiation Hardening
No
Rds On Max
55mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Termination
SMD/SMT
Threshold Voltage
2.4V
Turn-Off Delay Time
24ns
Turn-On Delay Time
8ns
DC Rated Voltage
60V
Weight
0.26037g
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDD5612 Datasheet
Download the complete datasheet for Onsemi FDD5612 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.