N-channel enhancement mode power MOSFET with a 500V drain-source voltage and 3.7A continuous drain current. Features a DPAK (TO-252AA) surface-mount package with gull-wing leads, offering a maximum power dissipation of 62.5W. Operates across a wide temperature range from -55°C to 150°C, with a typical gate charge of 9nC and input capacitance of 365pF.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Onsemi FDD5N50NZFTM technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-252
Package/Case
DPAK
Package Description
Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.73(Max)
Package Width (mm)
6.22(Max)
Package Height (mm)
2.39(Max)
Seated Plane Height (mm)
2.52(Max)
Pin Pitch (mm)
2.29
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-252AA
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
500V
Maximum Gate Source Voltage
±25V
Maximum Continuous Drain Current
3.7A
Maximum Drain Source Resistance
1470@10VmOhm
Typical Gate Charge @ Vgs
9@10VnC
Typical Gate Charge @ 10V
9nC
Typical Input Capacitance @ Vds
365@25VpF
Maximum Power Dissipation
62500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
5V1P1
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Onsemi FDD5N50NZFTM Datasheet
Download the complete datasheet for Onsemi FDD5N50NZFTM to view detailed technical specifications.
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