N-Channel Power MOSFET, UniFET-II™ series, featuring 500V drain-to-source breakdown voltage and 4A continuous drain current. This surface-mount component offers a low 1.5Ω drain-to-source resistance. Designed for efficient switching, it exhibits a 12ns turn-on delay and 21ns fall time. Packaged in DPAK with a maximum power dissipation of 62W, it operates from -55°C to 150°C.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power62W
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Technical Specifications
Onsemi FDD5N50NZTM technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 2.39mm |
| Input Capacitance | 440pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 62W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 62W |
| Radiation Hardening | No |
| Rds On Max | 1.5R |
| RoHS Compliant | Yes |
| Series | UniFET-II™ |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.26037g |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDD5N50NZTM Datasheet
Download the complete datasheet for Onsemi FDD5N50NZTM to view detailed technical specifications.
No datasheet is available for this part.