
N-Channel PowerTrench® MOSFET, 35V Drain to Source Breakdown Voltage, 59A Continuous Drain Current, and 10mΩ Drain to Source Resistance. This single-element MOSFET features a TO-252 package for surface mounting, with a maximum power dissipation of 55W and operating temperatures from -55°C to 150°C. It offers fast switching characteristics with a 11ns turn-on delay and 14ns fall time, and is supplied in a 2500-piece tape and reel.
Onsemi FDD6635 technical specifications.
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 59A |
| Drain to Source Breakdown Voltage | 35V |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 35V |
| Element Configuration | Single |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 1.4nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 55W |
| Radiation Hardening | No |
| Rds On Max | 10mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 11ns |
| Weight | 0.26037g |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDD6635 to view detailed technical specifications.
No datasheet is available for this part.
