
P-channel Power MOSFET, designed for surface mount applications in a TO-252 package. Features a 35V drain-source breakdown voltage and a continuous drain current of 55A. Offers low on-resistance (Rds On Max) of 11.6mΩ at a nominal gate-source voltage of -1.6V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 57W. This RoHS compliant component is supplied in tape and reel packaging.
Onsemi FDD6637 technical specifications.
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 55A |
| Drain to Source Breakdown Voltage | -35V |
| Drain to Source Resistance | 11.6mR |
| Drain to Source Voltage (Vdss) | 35V |
| Element Configuration | Single |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 2.39mm |
| Input Capacitance | 2.37nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 57W |
| Mount | Surface Mount |
| Nominal Vgs | -1.6V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.1W |
| Radiation Hardening | No |
| Rds On Max | 11.6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | -1.6V |
| Turn-Off Delay Time | 62ns |
| Turn-On Delay Time | 18ns |
| Weight | 0.26037g |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDD6637 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
