The FDD6670AS is a high-power N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 70W and a continuous drain current of 76A. The device is packaged in a TO-252-3 surface mount package and is lead-free and RoHS compliant. The FDD6670AS has a drain to source breakdown voltage of 30V and a gate to source voltage of 20V.
PackageTO-252-3
Current Rating76A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDD6670AS technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 76A |
| Current Rating | 76A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 8mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.58nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 70W |
| Rds On Max | 8mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 28ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDD6670AS Datasheet
Download the complete datasheet for Onsemi FDD6670AS to view detailed technical specifications.
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