The FDD6670S is a N-CHANNEL MOSFET with a drain to source breakdown voltage of 30V and a continuous drain current of 64A. It has a power dissipation of 70W and a drain to source resistance of 9mR. The device is packaged in a TO-252AA package and is available in quantities of 2500 on tape and reel. The FDD6670S operates over a temperature range of -55°C to 150°C and is RoHS compliant.
PackageTO-252AA
PolarityN-CHANNEL
Power70W
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Technical Specifications
Onsemi FDD6670S technical specifications.
General
| Package/Case | TO-252AA |
| Continuous Drain Current (ID) | 64A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 9mR |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 70W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 34ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDD6670S Datasheet
Download the complete datasheet for Onsemi FDD6670S to view detailed technical specifications.
No datasheet is available for this part.