The FDD6680_Q is a TO-252AA packaged N-CHANNEL MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 55A and a drain to source breakdown voltage of 30V. The device also features a drain to source resistance of 8.6mR and a power dissipation of 3.3W. It is available in tape and reel packaging and is suitable for use in high-temperature applications.
PackageTO-252AA
PolarityN-CHANNEL
Power3.3W
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Technical Specifications
Onsemi FDD6680_Q technical specifications.
General
| Package/Case | TO-252AA |
| Continuous Drain Current (ID) | 55A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 8.6mR |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.3W |
| Turn-Off Delay Time | 29ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDD6680_Q Datasheet
Download the complete datasheet for Onsemi FDD6680_Q to view detailed technical specifications.
No datasheet is available for this part.