N-Channel Power MOSFET, designed for efficient power switching. Features a 25V drain-source breakdown voltage and a low 4mΩ drain-source resistance at a 10V gate-source voltage. Offers a continuous drain current of 27A and a maximum power dissipation of 65W. Packaged in a DPAK surface-mount case, this silicon metal-oxide semiconductor FET operates across a wide temperature range from -55°C to 175°C. Includes fast switching characteristics with a 9ns turn-on delay and 5ns fall time.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power3.7W
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Technical Specifications
Onsemi FDD6770A technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
27A
Drain to Source Breakdown Voltage
25V
Drain to Source Resistance
4mR
Drain to Source Voltage (Vdss)
25V
Fall Time
5ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
2.405nF
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
65W
Mount
Surface Mount
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.7W
Radiation Hardening
No
Rds On Max
4mR
RoHS Compliant
Yes
Series
PowerTrench®
Turn-Off Delay Time
24ns
Turn-On Delay Time
9ns
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDD6770A Datasheet
Download the complete datasheet for Onsemi FDD6770A to view detailed technical specifications.
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