N-Channel Power MOSFET, designed for efficient power switching. Features a 25V drain-source breakdown voltage and a low 4mΩ drain-source resistance at a 10V gate-source voltage. Offers a continuous drain current of 27A and a maximum power dissipation of 65W. Packaged in a DPAK surface-mount case, this silicon metal-oxide semiconductor FET operates across a wide temperature range from -55°C to 175°C. Includes fast switching characteristics with a 9ns turn-on delay and 5ns fall time.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power3.7W
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Technical Specifications
Onsemi FDD6770A technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 27A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 4mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 2.405nF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 65W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.7W |
| Radiation Hardening | No |
| Rds On Max | 4mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 9ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDD6770A Datasheet
Download the complete datasheet for Onsemi FDD6770A to view detailed technical specifications.
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