Onsemi
FDD6796A
Power Field-Effect Transistor, 20A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power3.7W
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Technical Specifications
Onsemi FDD6796A technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 5.7mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.78nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.7W |
| Radiation Hardening | No |
| Rds On Max | 5.7mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 8ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDD6796A Datasheet
Download the complete datasheet for Onsemi FDD6796A to view detailed technical specifications.
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