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Technical Specifications
Onsemi FDD6N50FTF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 950mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 20.5ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 960pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 89W |
| Mount | Surface Mount |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 89W |
| Rds On Max | 1.15R |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Turn-Off Delay Time | 33.4ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDD6N50FTF Datasheet
Download the complete datasheet for Onsemi FDD6N50FTF to view detailed technical specifications.
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