N-channel MOSFET featuring 500V drain-source breakdown voltage and 6A continuous drain current. This surface-mount component offers a maximum power dissipation of 89W and a low on-resistance of 900mΩ. Operating across a wide temperature range from -55°C to 150°C, it boasts fast switching speeds with turn-on delay time of 6ns and fall time of 35ns. Packaged in TO-252-3 (DPAK) and supplied on tape and reel, this RoHS compliant device is ideal for power switching applications.
PackageTO-252-3
Current Rating24A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDD6N50TF technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
6A
Current Rating
24A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
900mR
Drain to Source Voltage (Vdss)
500V
Fall Time
35ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
940pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
89W
Mount
Surface Mount
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
89W
Radiation Hardening
No
Rds On Max
900mR
RoHS Compliant
Yes
Series
UniFET™
Turn-Off Delay Time
25ns
Turn-On Delay Time
6ns
DC Rated Voltage
500V
Compliance
RoHS
Compliant
Datasheet
Onsemi FDD6N50TF Datasheet
Download the complete datasheet for Onsemi FDD6N50TF to view detailed technical specifications.
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