N-channel MOSFET featuring 500V drain-source breakdown voltage and 6A continuous drain current. This surface-mount component offers a maximum power dissipation of 89W and a low on-resistance of 900mΩ. Operating across a wide temperature range from -55°C to 150°C, it boasts fast switching speeds with turn-on delay time of 6ns and fall time of 35ns. Packaged in TO-252-3 (DPAK) and supplied on tape and reel, this RoHS compliant device is ideal for power switching applications.
PackageTO-252-3
Current Rating24A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDD6N50TF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 6A |
| Current Rating | 24A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 900mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 940pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 89W |
| Mount | Surface Mount |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 89W |
| Radiation Hardening | No |
| Rds On Max | 900mR |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 6ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDD6N50TF Datasheet
Download the complete datasheet for Onsemi FDD6N50TF to view detailed technical specifications.
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