N-Channel MOSFET, 500V Drain to Source Breakdown Voltage, 6A Continuous Drain Current, 0.9 Ohm Max Drain to Source Resistance. Features a TO-252-3 (DPAK) surface mount package, 89W max power dissipation, and 150°C max operating temperature. Includes 35ns fall time, 25ns turn-off delay, and 6ns turn-on delay. Input capacitance is 9.4nF with a 30V gate to source voltage rating. Supplied on a 2500-piece tape and reel.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power89W
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Technical Specifications
Onsemi FDD6N50TM-F085 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 760mR |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 9.4nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 89W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 89W |
| Radiation Hardening | No |
| Rds On Max | 900mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101 |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 6ns |
| Weight | 0.26037g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDD6N50TM-F085 Datasheet
Download the complete datasheet for Onsemi FDD6N50TM-F085 to view detailed technical specifications.
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