
N-Channel MOSFET, PowerTrench® series, featuring 40V drain-source breakdown voltage and 28A continuous drain current. Offers a maximum drain-source on-resistance of 24mΩ at a nominal gate-source voltage of 2.1V. This single-element, surface-mount transistor is housed in a TO-252 package, with a maximum power dissipation of 30W. Designed for efficient switching with typical turn-on delay of 7ns and fall time of 2ns. RoHS compliant and lead-free.
Onsemi FDD8451 technical specifications.
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 28A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 24MR |
| Element Configuration | Single |
| Fall Time | 2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 990pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Surface Mount |
| Nominal Vgs | 2.1V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| Rds On Max | 24mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 2.1V |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 7ns |
| Weight | 0.26037g |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDD8451 to view detailed technical specifications.
No datasheet is available for this part.