
N-channel Power MOSFET featuring TrenchFET technology, designed for automotive applications. This single-element device offers a 40V drain-source voltage and a continuous drain current of 50A. It is housed in a 3-pin DPAK (TO-252AA) lead-frame SMT package with gull-wing leads for surface mounting. Key specifications include a maximum drain-source on-resistance of 6.5 mOhm at 10V and a maximum power dissipation of 118W, operating within a temperature range of -55°C to 175°C.
Onsemi FDD8453LZ-F085 technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-252 |
| Package/Case | DPAK |
| Package Description | Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.73(Max) |
| Package Width (mm) | 6.22(Max) |
| Package Height (mm) | 2.39(Max) |
| Seated Plane Height (mm) | 2.52(Max) |
| Pin Pitch (mm) | 2.29 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-252AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TrenchFET |
| Maximum Drain Source Voltage | 40V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 50A |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Drain Source Resistance | 6.5@10VmOhm |
| Typical Gate Charge @ Vgs | 60@10V|32@5VnC |
| Typical Gate Charge @ 10V | 60nC |
| Typical Input Capacitance @ Vds | 2935@20VpF |
| Maximum Power Dissipation | 118000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| PPAP | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Onsemi FDD8453LZ-F085 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.